III-V Semiconductors Nanostructures for Photovoltaics

Abstract

The performance of lasers, LEDs, photodetectors among other semiconductor devices have tremendously benefited from the use of nanostructures such as quantum wells, wires and dots. However, it has not yet been experimentally demonstrated that their introduction in solar cells brings advantages, although it has, theoretically, been largely confirmed.

In this communication, two types of nanostructures for photovoltaics shall be addressed, namely: InGaAs/InGaP quantum wells for multi junction and InAs/InGaAsP quantum dots for intermediate band solar cells. Although the experimental results are still in their infancy, they show promising routes to be followed.

Bio

Patrícia Lustoza de Souza received her B.A., M. Sc. and Doctor degrees in physics from the University of California, San Diego in 1981, from the San Diego State University in 1984 and from Pontifícia Universidade Católica do Rio de Janeiro (PUC-Rio) in 1989, respectively. From 1989 until 2024 she was a Professor at PUC-Rio and since 1997 the Head of its Semiconductor Laboratory. She is now Full Professor at the Federal University of Rio de Janeiro. She has been engaged in research in III-V semiconductor materials for electronic and optoelectronic devices.