MOSFET Evolution from Micro to Nano Era

Abstract

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the main device of the integrated circuits era. This presentation begins with an overview of the main steps in MOSFET evolution and ends with a discussion of possible FET devices for future technologies. The starting point was the Lilienfeld patent filed in 1925 which was not fabricated due to technological difficulties. Experimental Metal-Oxide-Semiconductor FET (MOSFET) was only obtained in 1960. The historical basic MOSFET was composed by Aluminum (Metal), silicon dioxide (Oxide) and Silicon (Semiconductor). In order to follow the Moore´s Law evolution and to avoid the short channel effects the basic MOSFET have to be upgraded using new materials and new device structures in order to improve the electrostatic control between gate and channel. The MOSFET has been upgraded with different gate electrode like polysilicon heavily doped, TiN and TaN. The gate oxide has also been replaced to high-k dielectrics like SiON, HfSiON and HfO2 in order to avoid gate leakage current. Finally, the well-known silicon channel has also been modified to strained silicon (uniaxial and biaxial), SiGe, Ge, InGaAs in order to boost the carrier’s mobility. The MOSFET electrical characteristics was improved from Bulk MOSFET to Fully-Depleted SOI (Silicon-on-Insulator) MOSFET thanks to body factor. The reconfigurable transistor BESOI MOSFET will be also presented and applications will be discussed. The MOSFET evolution from planar to 3D structures such as FinFET, nanowire, nanosheet, forksheet and CFET devices for enhancing the electrostatic coupling is presented. New experimental results of forksheet FETs for analog applications at high temperatures will also be presented.

Bio

Joao Antonio Martino (SM’07) was born in Sao Paulo, Brazil, in 1959, preserving both nationalities: Brazilian and Italian. He received the degree in electrical engineering from FEI University Center, in 1981, and starting on microelectronics field since 1982 on graduated program, when he received the Master (NMOS technology) and Ph.D (CMOS technology) degrees in 1984 and 1988, respectively, in electrical engineering (microelectronics area) from University of Sao Paulo (USP), Brazil. He worked as a post-doctoral researcher in joint collaboration between Imec (Interuniversity Microelectronic Center)/KU Leuven (Catholic University of Leuven), Belgium and University of Sao Paulo, from 1989 to 1994 in SOI technology and devices. In 1992, he joined the Department of Electronic Systems of University of Sao Paulo, Brazil, where he has been full Professor since 2005. He is also head of CMOS SOI group since 1990 and head of Laboratory of Integrated Systems since 2017, both from University of São Paulo. He was also the head of Department of Electronic System from 2009 to 2013 and head of Electrical Engineering graduation course from 2019 to 2023 from University of Sao Paulo. He is author and co-author of more than 700 technical journal papers and conference proceedings and author/editor of 7 books. He completed the supervision of 73 graduate students (40 masters and 23 PhDs). He introduced the study of SOI devices characterization and technology in Brazil in 1990. He was the head of the first 3D transistor (electron beam triple gate FinFET) fabricated in South America in 2012. He got the patent of the first reconfigurable SOI MOSFET fabricated in South America in 2015. His current research interests include electrical characterization and fabrication of SOI, multiple gate (FinFET, nanowire, nanosheet, forksheet), Tunnel-FET, Reconfigurable FET and Bio-FET devices. The application of new transistors in basic analog circuits is also studied. He is Senior Member of IEEE, Member of Electrochemical Society. He was Vice-Chair of Region 9 Subcommittee for Regions/Chapters of IEEE Electron Device Society (EDS/IEEE) from 2013 to 2018. He has been Chapter Chair of South Brazil Session of EDS/IEEE since 2007 and Distinguished Lecturer of EDS/IEEE since 2008. He is a PQ-1A researcher at CNPq. He received the Padre Roberto Landell de Moura Award in 2016 from the Brazilian Society of Microelectronics.